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| 2SK2446-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,055 30A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 100 100 30 120 20 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Thermal Characteristics Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 125 1,56 Unit C/W C/W Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=100V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=15A VGS=4V ID=15A VGS=10V ID=15A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=30A VGS=10V RGS=25 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 100 1,0 Typ. 1,5 10 0,2 10 0,04 0,03 30 2500 500 250 20 140 500 260 0,9 130 1,0 Max. 2,5 500 1,0 100 0,07 0,055 3700 750 380 30 210 750 390 1,5 15 Unit V V A mA nA S pF pF pF ns ns ns ns V ns C Thermal Resistance N-channel MOS-FET 100V 0,055 30A 2SK2446-L,S F-III Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=15A; VGS=10V 80W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Transconductance gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=30A Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [nF] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T PD [W] 10 ID [A] 12 Tch [C] VDS [V] t [s] This specification is subject to change without notice! |
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